GaAs-based VCSEL-structures with strain-compensated (GaIn)As/Ga(PAs)- MQWH active regions grown by using TBAs and TBP

C. Ellmers, S. Leu, R. Rettig, Martin R. Hofmann , W.W. Rühle, W. Stolz

ICMOVPE IX, La Jolla, California, USA

Tags: